정보통신대학 - 정보통신대학

  • 교수 반도체 소재/소자
  • 박진홍
    Lab 차세대나노반도체소자연구실

관심분야

Next Generation Low-power Device Research; - Multi-valued Logic Devices (NDR/NDT-based MVL Devices/Circuits Integration) - Neuromorphic Devices (Synaptic/Neuronal Devices and 3D Integration) - Novel Devices for Process-In-Memory 
2D Materials-based Research; - 2D Semiconductor Fabrication Technologies (Doping, Contact, and etc.) - 2D Semiconductor Applications (Photodetectors and Transistors)

학력

  • (Ph.D.) in Electrical Engineering, Stanford University, CA, USA. (2009)
  • (M.S.) in Electrical Engineering, Stanford University, CA, USA. (2006)
  • (B.S.) in Electrical Engineering, Sungkyunkwan University (SKKU), Korea. (2004)

약력/경력

  • Professor (SKKU Fellow in 2024), Sungkyunkwan University (2021-Present)
  • Advisory Professor, Samsung Electronics Future Technology Council (2022-Present)
  • Editorial Board Member, Nanoscale Horizons, Royal Society of Chemistry (2023-Present)
  • Associate Professor (Early-tenured in 2017 & SKKU Young-Fellow in 2019), Sungkyunkwan University (2016-2021)
  • Visiting Professor, Stanford University, CA, USA. (2017-2018)
  • Assistant Professor, Sungkyunkwan University (2011-2016)
  • Assistant Professor, Kyunghee University, Korea. (2010-2011)
  • Postdoctoral Scientist, IBM T. J. Watson Research Center, NY, USA. (2009-2010)

학술지 논문

  • (2024)  High energy density in artificial heterostructures through relaxation time modulation.  SCIENCE.  384, 
  • (2024)  Layer-by-layer thinning of two-dimensional materials.  CHEMICAL SOCIETY REVIEWS. 
  • (2024)  Oxide and 2D TMD semiconductors for 3D DRAM cell transistors.  NANOSCALE HORIZONS. 
  • (2024)  Junctionless Negative-Differential-Resistance Device Using 2D Van-Der-Waals Layered Materials for Ternary Parallel Computing.  ADVANCED MATERIALS.  2310015
  • (2024)  Intrinsically stretchable sensory-neuromorphic system for sign language translation.  CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE.  29,  101142
  • (2023)  Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array.  NATURE COMMUNICATIONS.  14, 
  • (2023)  Broadband Van-der-Waals Photodetector Driven by Ferroelectric Polarization.  SMALL. 
  • (2023)  Tactile Neuromorphic System: Convergence of Triboelectric Polymer Sensor and Ferroelectric Polymer Synapse.  ACS NANO.  17,  17
  • (2022)  Non-epitaxial single-crystal 2D material growth by geometrical confinement.  NATURE. 
  • (2022)  A biomimetic ocular prosthesis system: emulating autonomic pupil and corneal reflections.  NATURE COMMUNICATIONS.  13,  1
  • (2022)  Ferro-floating memory: Dual-mode ferroelectric floatingmemory and its application to in-memory computing.  INFOMAT. 
  • (2022)  Looking Beyond 0 and 1: Principles and Technology of Multi-Valued Logic Devices.  ADVANCED MATERIALS. 
  • (2022)  A Van Der Waals Reconfigurable Multi-Valued Logic Device and Circuit Based on Tunable Negative-Differential-Resistance Phenomenon.  ADVANCED MATERIALS.  2202799
  • (2022)  High-Efficiency WSe2Photovoltaic Devices with Electron-Selective Contacts.  ACS NANO.  16,  6
  • (2022)  Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure.  ADVANCED SCIENCE.  9,  21
  • (2022)  Mixed-Dimensional Formamidinium Bismuth Iodides Featuring In-Situ Formed Type-I Band Structure for Convolution Neural Networks.  ADVANCED SCIENCE.  9,  14
  • (2022)  Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications.  ACS NANO.  16,  4
  • (2022)  Electrolyte‐Gated Vertical Synapse Array based on Van Der Waals Heterostructure for Parallel Computing.  ADVANCED SCIENCE. 
  • (2021)  Photoelectroactive artificial synapse and its application to biosignal pattern recognition.  NPJ 2D MATERIALS AND APPLICATIONS.  5,  1
  • (2021)  High-specific-power flexible transition metal dichalcogenide solar cells.  NATURE COMMUNICATIONS.  12,  1

특허/프로그램

  • NEGATIVE DIFFERENTIAL RESISTANCE DEVICE.  US 2022/0093803A1.  20230606.  미국
  • TANDEM SOLAR CELLS HAVING A TOP OR BOTTOM METAL CHALCOGENIDE CELL.  US 2021/0359150A1 .  20230221.  미국
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF.  US20210005710A1.  20221101.  미국
  • NEGATIVE DIFFERENTIAL RESISTANCE Publication Classification ELEMENT HAVING 3 - DIMENSION VERTICAL STRUCTURE.  US20200357988A1.  20220906.  미국
  • 다중 영미분 전달전도 특성을 갖는 반도체 소자 및 그 제조 방법.  10-2021-0005577.  20220706.  대한민국
  • MULTI - NEGATIVE DIFFERENTIAL TRANSCONDUCTANCE DEVICE AND METHOD OF PRODUCING THE SAME.  US20210111283A1.  20220510.  미국
  • 인공 시냅스 소자 및 이의 제조방법 (Artificial synaptic device and method for manufacturing the same).  10-2020-0119915.  20210907.  대한민국
  • 반데르발스 힘을 이용한 박막 필름 전사 방법 (TRANSFER METHOD OF THIN FILMS USING VAN DER WAALS FORCE).  10-2018-0121014.  20210512.  대한민국
  • 부성미분저항 소자 제조방법.  10-2019-0113760.  20210325.  대한민국
  • 다중 부성미분 전달전도 특성 소자 및 그 제조방법.  10-2019-0127835.  20210225.  대한민국
  • 반도체 소자 및 그 제조방법.  10-2019-0078909.  20210219.  대한민국
  • 시냅스 소자 및 이의 제조 방법.  10-2019-0055291.  20210128.  대한민국
  • Semiconductor device with negative differential transconductance and method of manufacturing the same.  US20180358446A1.  20201117.  미국
  • 크로스바 메모리 구조를 이용한 뉴로모픽 소자.  10-2018-0104819.  20201012.  대한민국
  • 3차원 수직 구조를 갖는 부성미분저항 소자.  10-2019-0054471.  20200825.  대한민국
  • 부성 미분 전달컨덕턴스 특성을 갖는 반도체 소자 및 그 제조 방법.  10-2018-0148295.  20200625.  대한민국
  • 자발 분극 동작 원리를 이용한 뉴런 소자.  10-2019-0049383.  20200624.  대한민국
  • 2T1C 구조를 갖는 멀티 레벨 CMOS 랜덤 액세스 메모리 및 그 제조방법.  10-2018-0068304.  20200512.  대한민국
  • 핀 구조를 갖는 반도체 소자 및 이의 제조 방법.  10-2018-0169742.  20200424.  대한민국
  • 반도체소자 및 그 제조 방법.  10-2018-0039526.  20200413.  대한민국

수상/공훈

  • SKKU Fellowship (성균관대학교 펠로우쉽), 2024
  • Nanoscale Horizons 2021 Outstanding Paper Award (2021 우수논문상), 2022
  • SKKU Young-Fellowship (성균관대학교 영펠로우쉽), 2019
  • Young Scientist Award of Graphene Research Society of Korea (한국그래핀연구회/ 제5회 그래핀/2D소재심포지엄 신진학술상), 2018
  • Science/Technology Award of This Month by National Research Foundation of Korea (한국연구재단 이달의과학기술인상), 2017
  • LG Yonam Foundation Overseas Research Professor Fellowship (LG 연암재단 해외연구교수), 2017-2018
  • Haedong Young Engineering Researcher Award by IEEE Korea (대한전자공학회 해동상 젊은공학인상), 2016
  • Abroad Graduate Study Fellowship by the Korea Science and Engineering Foundation National Scholarship Program (연구재단 국비유학장학생), 2004-2006

학술회의논문

  • (2023)  BP-assisted formatin of vdW contact with MoS2.  AEFM 2023.  대한민국
  • (2023)  WSe2 FET with electron-beam-induced W-shaped I-V characteristic and its application to ternary NAND gate.  7th IEEE Electron Devices Technology and Manufacturing Conference.  대한민국
  • (2020)  MoSe2/ReS2 Vertical Heterostructures for High-efficiency Photovoltaics.  한국진공학회- 하계정기학술대회.  대한민국
  • (2020)  N-type Doping Technique using PPh3 based on TMDs.  한국진공학회- 하계정기학술대회.  대한민국
  • (2020)  Controllable photoacid diffusion using external electric field.  한국진공학회- 하계정기학술대회.  대한민국
  • (2020)  Artificial VdW Synapse based on WS2 for Brain-inspired Computing.  Nano Korea 2020.  대한민국
  • (2020)  High photovoltaic effect in vertical multilayer ReS2/MoSe2 heterostructures.  Nano Korea 2020.  대한민국
  • (2020)  Light-Induced Negative Differential Transconductance based on Partial Gate Technology.  Nano Korea 2020.  대한민국
  • (2019)  High-performance tunsten diselenide (WSe2)-based photodetector enhanced by HCl treatment.  The 11th International Conference on Advanced Materials and Devices.  대한민국
  • (2019)  Oxygen Plasma-based P-type Doping on Hafnium Disulfide.  The 11th International Conference on Advanced Materials and Devices.  대한민국
  • (2019)  Artificial Synapse based on 2D Van der Waals Heterostructure.  The 11th International Conference on Advanced Materials and Devices.  대한민국
  • (2019)  2D Material based Lateral Synaptic Device using Ion Gel Gating.  제57회 한국진공학회 하계.  대한민국
  • (2019)  Artificial Optic-Neural Synapse for Colored and Color-Mixed Pattern Recongnition.  제26회 한국반도체학술대회.  대한민국
  • (2019)  Artificial Synaptic Device based on Ferroelectric Polymer Capacitor.  제26회 한국반도체학술대회.  대한민국
  • (2018)  Micro-scale control of transition metal dichalcogenides (TMDs)-based transistor with plasma process.  제55회 한국진공학회 하계정기학술대회.  대한민국
  • (2018)  Negative differential resistance oscillator using vdW materail-based Esaki diode.  제55회 한국진공학회 하계정기학술대회.  대한민국
  • (2018)  Photovoltaic effect based on multilayer ReS2.  제55회 한국진공학회 하계정기학술대회.  대한민국
  • (2018)  Artificial Optic-Neural Synaptic Device for Colored-Pattern Recognition.  Nanotech 2018.  미국
  • (2018)  Multi-Current-Peak Negative Differential Resistance Device using Two-Dimensional Materials.  NANOTECH 2018.  미국
  • (2018)  High Performance Solid Polymer Electrolyte Atomic Switching Device using PVP/PMF.  Materials Research Society Meeting.  미국